Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

650V SiC Schottky diodes. Rated at 4A, 6A, 8A, 10A, and 12A, the DSCxxA065LP series is housed in the ultra-thermally efficient T-DFN8080-4 package and is designed for high-efficiency power ...

Infineon’s CoolGaN™ Transistors with integrated Schottky diode enhance power system performance by minimizing dead time-related losses. Infineon Technologies AG has launched the world’s first gallium ...

Infineon Technologies AG has announced the release of the world’s first industrial-grade gallium nitride (GaN) transistor family featuring an integrated Schottky diode. The new CoolGaN Transistor G5 ...

An Ode to the Diode [Brian] even goes so far as to include ... There’s really not much to look at, there’s a few circuit diagrams and an explanation of the theory behind these unregulated ...

Some fundamental requirements for any parallel connected surge protection devices are: TVS diodes are widely used in the 2 – 250 A I pp protection as they offer the best compromise in performance, ...

Persistent Link: https://ieeexplore.ieee.org/servlet/opac?punumber=55 ...

Department of Physical Chemistry, Fritz Haber Institute of the Max Planck Society, Faradayweg 4-6, 14195 Berlin, Germany Department of Physics, Freie Universität Berlin, Arnimallee 14, 14195 Berlin, ...

School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, U.K.