Watch how the action unfolded at the gruelling Red Bull Outliers Hard Enduro race in the Canadian Badlands.
Abstract: A dual-gate ion-sensitive field-effect transistor (DGFET) with the back-side sensing structure implemented in a 0.18 μm SOI-CMOS SoC platform realizing high performance bioelectrical ...
Abstract: A comparative DC and AC performance evaluation between tri-gate FinFETs and gate-all-around nanowire FETs is carried out for potential sub-7nm technology node. The comparative analysis of ...
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