AlphaGalileo12h
Unlocking the Potential of Terahertz Radiation with N-Polar AlGaN/GaN HEMTs
Researchers have demonstrated a novel approach to generating terahertz (THz) radiation using N-polar AlGaN/GaN high-electron-mobility transistors ...
High Electron Mobility Transistor Market Present Scenario And Growth Prospects 2021 - 2031
High Electron Mobility Transistor Market Expected to Reach $9.3 Billion by 2031 - Allied Market Research David Correa Allied Market Research + 1800-792-5285 email us here Visit us on social media: ...
Electronic Design14d
GaN HEMTs Bring Low-Noise Power to Switching Apps
Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...
Yahoo Finance29d
ROHM Launches 650V GaN HEMT in a Compact, High-heat Dissipation TO-Leadless Package
Santa Clara, CA and Kyoto, Japan, Feb. 27, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the GNP2070TD-Z 650V GaN HEMTs in the TO-Leadless (TOLL) package. Featuring a compact design ...
EDN22d
650-V GaN HEMT resides in TOLL package
Rohm Semiconductor introduced the GNP2070TD-Z, a 650-V enhancement-mode GaN HEMT in a TO-leadless (TOLL) package. With dimensions of 11.68×9.9×2.4 mm, this compact package enhances heat dissipation, ...
Compound Semiconductor9d
Mitsubishi samples GaN PA for 5G massive MIMO
Mitsubishi Electric Corporation will begin shipping samples of a new 16W-average-power GaN power amplifier module (PAM) for ...
Semiconductor Engineering2y
Ferroelectric HEMT Reconfigurable Transistor (U. of Michigan)
A new technical paper titled “Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT” was published by researchers at University of Michigan. “We can make our ferroelectric HEMT reconfigurable ...