High Electron Mobility Transistor Market Expected to Reach $9.3 Billion by 2031 - Allied Market Research David Correa Allied Market Research + 1800-792-5285 email us here Visit us on social media: ...

Qorvo, a global leader in connectivity and power solutions, has introduced powerful new modelling capabilities to its award-winning QSPICE® circuit simulation software. This latest feature enables ...

ROHM Semiconductor today announced the GNP2070TD-Z 650V GaN HEMTs in the TO-Leadless (TOLL) package. Featuring a compact design with excellent heat dissipation, high current capacity, and superior ...

Infineon’s GaN offerings are built on their CoolGaN™ technology, which is based on a normally-off, lateral GaN-on-Si HEMT (High Electron Mobility Transistor) architecture. CoolGaN™ devices emphasize ...

Gallium nitride (GaN), a third-generation semiconductor material, is widely used in devices such as chargers, 5G base stations, radar systems, military communications, and aerospace applications.

A research team at the Korea Electrotechnology Research Institute (KERI) has developed technology to evaluate radiation resistance and reliability of SiC power semiconductor devices in Space. Space ...

GaN on Silicon Technology Market Analysis Report 2025: Size, Share, and Trends by Applications (Consumer Electronics, IT and Telecommunication, Automotive, Aerospace and Defense, Others), By Types ...

Qorvo Stock Down 2.4 % Shares of NASDAQ:QRVO opened at $77.03 on Monday. The firm has a market cap of $7.19 billion, a P/E ratio of 275.11, a P/E/G ratio of 15.93 and a beta of 1.41. Qorvo, Inc ...