Electronic Design8d
GaN HEMTs Bring Low-Noise Power to Switching Apps
Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...
Compound Semiconductor2d
Mitsubishi samples GaN PA for 5G massive MIMO
Mitsubishi Electric Corporation will begin shipping samples of a new 16W-average-power GaN power amplifier module (PAM) for ...
EDN15d
650-V GaN HEMT resides in TOLL package
Rohm Semiconductor introduced the GNP2070TD-Z, a 650-V enhancement-mode GaN HEMT in a TO-leadless (TOLL) package. With dimensions of 11.68×9.9×2.4 mm, this compact package enhances heat dissipation, ...
Semiconductor Engineering2y
Ferroelectric HEMT Reconfigurable Transistor (U. of Michigan)
A new technical paper titled “Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT” was published by researchers at University of Michigan. “We can make our ferroelectric HEMT reconfigurable ...
High Electron Mobility Transistor Market Present Scenario And Growth Prospects 2021 - 2031
High Electron Mobility Transistor Market Expected to Reach $9.3 Billion by 2031 - Allied Market Research David Correa Allied Market Research + 1800-792-5285 email us here Visit us on social media: ...