The team from Wisconsin-Madison claims to be the first to break the 2 kV barrier for monolithic bidirectional GaN HEMTs, with ...
Researchers from Singapore’s Nanyang Technological University and its Agency for Science, Technology and Research are ...
Shaanxi Engineering Research Center of Flat Panel Display Technology, School of Electronic Information and Artificial Intelligence, Shaanxi University of Science and Technology, Xi’an, Shaanxi 710021, ...
Abstract: A vertical Ga2O3 junction-barrier Schottky (JBS) diode is fabricated using selective p-NiO/n-Ga2O3 heterojunction and applied in temperature sensing. Compared with the Schottky barrier diode ...
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