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powerelectronicsnews23d
Advances in Integrating Schottky Barrier Diodes with SiC MOSFETs
The use of an anti-parallel Schottky barrier diode (SBD) can improve the performance and reliability of silicon carbide MOSFETs in power conversion applications. In this article, we will showcase ...
Compoundsemiconductor.net23d
Building better multi-channel Schottky barrier diodes
Stable ohmic contacts are enabling multi-channel AlN/GaN Schottky barrier diodes to start fulfilling their potential Researchers from Singapore’s Nanyang Technological University and its Agency for ...
electronicsforu24d
2000 V SiC Schottky Diode For High-Power Applications
Infineon Technologies AG addresses this need with its CoolSiC Schottky Diode 2000 V G5 family—the industry’s first discrete 2000 V silicon carbide (SiC) diodes, introduced in September 2024. Expanding ...
C&EN1mon
Large On–Off Enhancement of Au Nanocatalyst Contacts to ZnO Nanowires with Bulk and Surface Oxygen Modification
Centre for NanoHealth, College of Engineering, Swansea University, Swansea SA2 8PP, United Kingdom Leiden Institute of Chemistry, Universiteit Leiden, PO Box 9502, Leiden 2300 RA, Netherlands ...
IEEE1mon
Temperature Sensitivity of Vertical Ga₂O₃ Junction Barrier Schottky Diode Using the p-NiO/n-Ga₂O₃ Heterojunction
Abstract: A vertical Ga2O3 junction-barrier Schottky (JBS) diode is fabricated using selective p-NiO/n-Ga2O3 heterojunction and applied in temperature sensing. Compared with the Schottky barrier diode ...