A lateral Ge/Si PIN avalanche photodiode is fabricated using the standard CMOS process. The primary responsivity is 0.95A/W with -3dB bandwidth over 67GHz at bias voltage of -4V. The gain bandwidth ...

Zinc (Zn) diffusion is a critical process for the fabrication of InGaAs/InP planar avalanche photodiodes (APDs). In this paper, we built up a Zn diffusion model to calculate Zn diffusion profile for ...

Recently, we spoke with Esther Olonimoyo from the University of Maryland, who recently published a study using high-performance liquid chromatography to analyze short chain fatty acids.