DG Matrix, the global leader in solid-state transformer solutions, today announced that it will source latest-generation ...

In power electronics applications, the compound semiconductor silicon carbide (SiC) has been demonstrated in published literature [1] to be a superior material to silicon (Si) in many properties for ...

CHANDLER, Ariz., Dec. 08, 2021 (GLOBE NEWSWIRE) -- E-mobility and renewable energy systems require power management solutions that drive performance and cost efficiencies in addition to speeding up ...

Cree’s Silicon Carbide power MOSFET delivers 1200V blocking voltage with lowest switching losses in its class. In a move that heralds a performance revolution in energy-efficient power electronics, ...

DURHAM, N.C.--(BUSINESS WIRE)--In a move that heralds a performance revolution in energy efficient power electronics, Cree, Inc. (Nasdaq: CREE), a market leader in silicon carbide (SiC) power devices, ...

TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “TW070J120B,” a 1200V silicon carbide (SiC) MOSFET for industrial applications that include large ...

CREE has developed a new MOSFET that could be suitable for silicon-carbide-based string inverters above 10 kW in size. The U.S. manufacturer says switching losses are 20% lower with the new transistor ...

Toshiba has developed a 2,200 V silicon carbide (SiC) MOSFET for inverters and energy storage systems, in order to help inverter manufacturers to reduce the size and weight of their products. Japanese ...

According to the latest study published by MarkNtel Advisors, the Global Silicon Carbide Market is projected to grow at a CAGR of around 27.12% during 2026–2032. The market expansion is primarily ...

Electric vehicle, commercial transportation, renewable energy and storage system designers can benefit from silicon carbide stack solution that drives performance and cost efficiencies and accelerates ...